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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1397
DESCRIPTION *With TO-3PN package *Built-in damper diode *High voltage ,high reliability *High speed switching APPLICATIONS *Color TV horizontal output applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 3.5 10 80 150 -55~150 UNIT V V V A A W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT VF PARAMETER Collector- emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Diode forward voltage CONDITIONS IC=100mA; RBE= IC=5mA; IE=0 IE=200mA; IC=0 IC=2.5A; IB=0.8A IC=2.5A; IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IEC=3.5A 40 8 MIN 800 1500 7
2SD1397
TYP.
MAX
UNIT V V V
8.0 1.5 10 130
V V A
mA
3 2.0
MHz V
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1397
Fig.2 outline dimensions (unindicated tolerance:0.10 mm)
3


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